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IPT60R022S7XTMA1
Manufacturer
Infineon
Description
Power Transistor MOSFET N-Channel Enhancement 600V 23A 8-Pin HSOF
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Manufacturer Package Identifier
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
23 A
600 V
20 mΩ
600 V
20 V
2.4 mm
150 °C
150 °C
PG-HSOF-8
-55 °C
1
390 W
Compliant
150 ns
30 ns
₹946.78
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹946.78
₹946.78
10
₹682.67
₹6826.71
25
₹711.76
₹17794.01
50
₹711.78
₹35588.93
100
₹575.68
₹57568.14
500
₹575.68
₹287840.70
1000
₹611.32
₹611318.82
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Manufacturer Package Identifier
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
23 A
600 V
20 mΩ
600 V
20 V
2.4 mm
150 °C
150 °C
PG-HSOF-8
-55 °C
1
390 W
Compliant
150 ns
30 ns
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